摘要
ZnOZnCdOZnO multiple quantum well samples grown on sapphire substrates by molecular beam epitaxy and annealed in situ were exposed to D2 plasmas at 150 °C. The deuterium showed migration depths of ∼0.8 μm for 30 min plasma exposures, with accumulation of H2 in the ZnCdO wells. The photoluminescence (PL) intensity from the samples was increased by factors of 5 at 5 K and ∼20 at 300 K as a result of the deuteration, most likely due to passivation of competing nonradiative centers. Annealing up to 300 °C led to increased migration of H2 toward the substrate but no loss of deuterium from the sample and little change in the PL intensity. The initial PL intensities were restored by annealing at 400 °C as H2 was evolved from the sample (∼90% loss by 500 °C). By contrast, samples without in situ annealing showed a decrease in PL intensity with deuteration. This suggests that even moderate annealing temperatures lead to degradation of ZnCdO quantum wells. © 2008 American Institute of Physics.