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Minimized Constrains for Lateral Profiling of Hot-Carrier-Induced Oxide Charge and Interface Traps in MOSFETs
Journal article   Peer reviewed

Minimized Constrains for Lateral Profiling of Hot-Carrier-Induced Oxide Charge and Interface Traps in MOSFETs

Chun-Yuan Lu and Kuei-Shu Chang-Liao
IEEE Electron Device Letters, Vol.25(2), pp.98-100
02/2004

Abstract

Charge-pumping current Fowler-Nordheim (FN) detrapping Gate-induced drain leakage (GIDL) current Lateral profile Two-step neutralization
For better understanding the hot-carrier-induced reliability problems, a charge-pumping technique has been developed to profile the Q ot and N it directly from the experimental results. However, the key neutralization condition is acquired by trial and error, which takes much time and effort. Therefore, a technique of two-step neutralization is proposed to find out the appropriate neutralization condition in this work. This two-step neutralization combined with the error-reduction method is shown to carry out the profiling more quickly and precisely.

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