摘要
2D materials are considered promising alternatives for traditional semiconductors in future electronics, but despite significant research efforts, their defectiveness remains too high for modern device requirements. Here, a new strategy is devised to identify defects in 2D materials and selectively fabricate electronic devices in defect-free regions. This "visualize-then-fabricate" strategy is enabled by a specialized defect-identifying surface capable of revealing nanoscopic flaws in the MoS2 lattice with superior resolution and throughput compared to conventional characterization methods. Leveraging this intermediate step, subsequent lithography can be conducted with precise control over the defectiveness within an electronic device, allowing for the study of the impact of line defects on carrier transport. Moreover, the approach extends the fabrication capabilities of 2D materials to complex 3D surfaces and fragile substrates, thus enhancing their potential for nonconventional and wearable electronics.