Logo image
Mixed etching-oxidation process to enhance the performance of spin-transfer torque MRAM for high-performance computing
Journal article

Mixed etching-oxidation process to enhance the performance of spin-transfer torque MRAM for high-performance computing

世杰 張
Applied Physics Letters
2024

Abstract

Ion beams;Ions;Magnetic anisotropy;Magnetic recording;MRAM devices;Reactive ion etching;Tunnel junctions;Tunnelling magnetoresistance

Metrics

1 Record Views

Details

Logo image