Abstract
Overlay is one of the key designed rules for producing VLSI devices. In order to have a better resolution and alignment accuracy in lithography process, it is important to model the overlay errors and then to compensate them into tolerances. This study aimed to develop a new model that bridges the gap between the existing theoretical models and the data obtained in real settings and to discuss the overlay sampling strategies with empirical data in a wafer fab. In addition, we used simulation to examine the relations between the various factors and the caused overlay errors. This paper concluded with discussions on further research. © 2001 Taylor & Francis Group, LLC.