Abstract
A tensile or compressive mechanical constraint was applied, during annealing, on the Pb(Zr 0.6 Ti 0.4 )O 3 (PZT) ferroelectric films to investigate the effects of stress on its crystal structure and electric properties. The external stress was applied by bending the substrate into a circular section. By using both precrystallized film structure and high constraint strain (0.08%), the stress states of PZT during the crystallization process became controllable. Structural change of polycrystalline PZT was observed when crystallized under a compression constraint. Moreover, these films with compression constraint annealing exhibited enhanced remnant polarization by ∼70% and increased dielectric constant by ∼68%. The variations in ferroelectric behaviors were correlated to domain configuration, texture, amount of pyrochlore phase, grain size and residual stress, which are dependent on the stress state during annealing process. © 2009 The American Ceramic Society.