摘要
We have grown bulk GaAsSb layers lattice matched to InP by molecular‐beam epitaxy. From the studies of scanning electron microscopy, x‐ray diffraction, and photoluminescence characterizations, these films exhibit mirror‐like surface morphology and good crystallographic quality, and show promising optical characteristic. The 300 K and 77 K photoluminescencespectra showed strong emission intensities. The measured 10 K linewidth was 8.6 meV for filmsgrown at 510 °C with a V/III ratio of 4. The Sb flux is only 3.6% of the As flux, confirming that the Sb incorporation rate limits the alloy composition of this ternary compound. No discrepancy was observed between the photoluminescence peak energies and calculated values, suggesting negligible radiative recombination via deep level traps.