Abstract
The large-scale single-crystalline SiNW arrays with morphological control of their orientation, diameter, and length by a statistical EMD technique was investigated. The experiments were performed on three kinds of single-crystal silicon wafers that include B-doped Si(100) (1-100Ω cm), B-doped Si(110) (1-10Ω cm), and B-doped Si(111) (1-30Ω cm). The SiNWs were carefully scratched from the samples and dispersed in ethanol in an ultrasonic bath for about 1 min. Several drops of SiNW suspension were placed on a clean holder and then an ultrathin gold film was deposited on top in order to enhance the resolution of SEI image after drying. The diameter of as-prepared SiNWs acquired by SEM measurement of at least 150 samples for each experiment was acquired. It was observed that the formation mechanism of anisotropic SiNWs can be successfully elucidated in accordance with both the lattice configuration of oriented Si surfaces and the passivation effect on H-terminated planes.