摘要
The morphological stability of Ag-Au multilayers on Si has been studied by conventional and high-resolution transmission electron microscopy, X-ray diffraction and Auger electron spectroscopy. In samples annealed at 300 and 400°C, multilayered Ag-Au films form a continuous textured layer on Si. In samples annealed at 500°C, pinholes were found to develop in the Ag-Au films. Island structures were formed in samples annealed at 600°C. The improved stability is attributed to the intermixing of Au and Ag so that the (Au-Ag)/Si interface is more stable than that of either the Au/Si or Ag/Si interface.