Abstract
The morphological stability of TiSi 2 in Ti/polycrystalline Si (poly-Si) and Ti/amorphous silicon (a-Si) samples has been investigated by both cross-section and planview transmission electron microscopy as well as by sheet resistance measurement. The agglomeration of TiSi 2 in Ti/poly-Si samples was found to occur after annealing at 800 °C for 1 h. In contrast, almost full surface coverage of TiSi 2 grains was observed on originally a-Si substrate at 900 °C for 1 h. The results indicated that the reaction of Ti thin films with a-Si results in the formation of fine TiSi 2 grains which in turn enhances the morphological stability of TiSi 2 . Sheet resistance data were found to correlate well with the morphological and microstructural observation.