- 題名
- Multibit N-Type and P-Type Fe-GAAFETs Using HfO/ZrO Superlattice Dielectric and SiGe/Si Superlattice Channel With Record Low Voltage, Large Memory Window, High Speed, and Reliability for High Density 1T NVM Applications
- 創作者：
- Yi Ju Yao - National Tsing Hua UniversityTsai Jung Lin - National Tsing Hua UniversityChen You Wei - National Tsing Hua UniversityKai Ting Huang - National Tsing Hua University, College of Semiconductor Research, Hsinchu, TaiwanBo Xu Chen - National Tsing Hua UniversityYung Teng Fang - National Tsing Hua UniversityHeng Jia Chang - National Tsing Hua UniversityYu Min Fu - National Tsing Hua University, College of Semiconductor Research, Hsinchu, TaiwanGuang Li Luo - Taiwan Semiconductor Manufacturing Company (Taiwan)Fu Ju Hou - Taiwan Semiconductor Manufacturing Company (Taiwan)Yung Chun Wu - National Tsing Hua University, Department of Engineering and System Science, Hsinchu, Taiwan
- 補助款備註
- United Microelectronics Corporation NSTC 112-2221-E-007-110-MY3; NSTC 113-2119-M-007-014-MBK; NSTC 113-2218-E-A49-021-MBK; NSTC 113-2221-E-492-008-MBK / National Science and Technology Council (http://data.elsevier.com/vocabulary/SciValFunders/100020595)
- 學術資源類型
- 期刊文章
- 出版日期
- 2025
- 出版資訊
- IEEE transactions on electron devices, 卷.72(4), 頁碼.1569-1573
- 語言
- 英語
期刊文章
Multibit N-Type and P-Type Fe-GAAFETs Using HfO/ZrO Superlattice Dielectric and SiGe/Si Superlattice Channel With Record Low Voltage, Large Memory Window, High Speed, and Reliability for High Density 1T NVM Applications
IEEE transactions on electron devices, 卷.72(4), 頁碼.1569-1573
2025
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