摘要
The rapid evolution of artificial intelligence (AI) computing demands innovative memory technologies that integrate high-speed processing with energy-efficient data storage. Here, we report a mixed-dimensional photomemory device based on a CsPbBr3/Al2O3/MoS2 architecture, leveraging perovskite quantum dots (PQDs) as a photoactive floating-gate layer, a tunable Al2O3 dielectric, and a 2D MoS2 channel. Optical and electrical characterization studies, including steady-state and time-resolved photoluminescence (PL), Kelvin probe force microscopy (KPFM), and current-voltage measurements, reveal the interplay of dielectric thickness and interfacial effects in governing charge transfer efficiency. By optimizing the Al2O3 thickness to 5.5 nm, we achieve precise control over charge transfer dynamics, enabling an optimal charge transfer rate with minimal optical energy (similar to sub-pJ) to store a single positive charge in the PQDs. The device exhibits exceptional optoelectronic performance, including a nearly linear correlation between incident photon number and average photocurrent (Iph(avg)) over two orders of magnitude, multilevel storage capability, and a memory window with a high on/off ratio. These findings establish a robust platform for next-generation perovskite-based photomemories, offering insights into energy-efficient, high-performance optoelectronic systems for advanced AI chip applications.