NGL comparable to 193-nm lithography in cost, footprint, and power consumption

Burn J. Lin

doi:10.1016/j.mee.2008.10.007

NGL comparable to 193-nm lithography in cost, footprint, and power consumption

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NGL comparable to 193-nm lithography in cost, footprint, and power consumption

Burn J. Lin

Microelectronic Engineering, 卷.86(4-6), 頁碼.442-447

04/2009

DOI: https://doi.org/10.1016/j.mee.2008.10.007

摘要

Direct-write lithography

E-beam lithography

EUV lithography

Maskless lithography

Microlithography

Next-generation lithography

Electronic

Optical and Magnetic Materials

Atomic and Molecular Physics

and Optics

Condensed Matter Physics

Surfaces

Coatings and Films

Electrical and Electronic Engineering

A comparison of ArF immersion single exposure, double patterning, extreme UV, and multi-e-beam maskless lithography (MEB ML2) systems, is made on their special characteristics, then in footprint, cost, and raw energy consumption. Only the MEB ML2 system has the potential to mimic ArF immersion single exposure in the three areas compared. In addition, MEB ML2 does not have the burden of mask-contributed CD and overlay variation, mask cost, cycle time, pellicle, contamination, and electrostatic-discharge-induced damage. Key challenges to develop MEB ML2 into a high-volume manufacturing technology are also given. © 2008 Elsevier B.V. All rights reserved.

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題名: NGL comparable to 193-nm lithography in cost, footprint, and power consumption
翻譯題名: NGL comparable to 193-nm lithography in cost, footprint, and power consumption
創作者：: Burn J. Lin (作者) - Taiwan Semiconductor Manufacturing Company (United States)
學術資源類型: 期刊文章
出版日期: 04/2009
出版資訊: Microelectronic Engineering, 卷.86(4-6), 頁碼.442-447
語言: 英語

NGL comparable to 193-nm lithography in cost, footprint, and power consumption

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