Abstract
It has been found that atomic force microscope (AFM) induced local oxidation is an effective way for converting thin (<5 nm) Si <sub>3</sub> N <sub>4</sub> films to SiO <sub>x</sub> . The threshold voltage for the 4.2 nm film is as low as 5 V and the initial growth rate is on the order of 10 <sup>3</sup> nm/s at 10 V. Micro-Auger analysis of the selectively oxidized region revealed the formation of SiO <sub>x</sub> . Due to the large chemical selectivity in various etchants and great thermal oxidation rate difference between Si <sub>3</sub> N <sub>4</sub> , SiO <sub>2</sub> , and Si, AFM patterning of Si <sub>3</sub> N <sub>4</sub> films can be a promising method for fabricating nanoscale structures. © 2000 American Institute of Physics.