Abstract
Cubic phase Y2 O3 films 1.6-10 nm thick of excellent quality have been epitaxially grown on Si (111) with Y2 O3 (111) Si (111) using electron beam evaporation of Y2 O3 in ultrahigh vacuum. Structural and morphological studies were carried out by x-ray scattering and reflectivity and high-resolution transmission electron microscopy, with the growth being in situ monitored by reflection high energy electron diffraction. There are two Y2 O3 domains in the initial stage of the oxide growth with equal population, and the B -type domain of Y2 O3 [2 1- 1-] Si [11 2-] becomes predominating over the A -type domain of Y2 O3 [2 1- 1-] Si [2 1- 1-] with increasing film thickness. Besides the excellent crystallinity of the films as derived from the small ω -rocking curve width of 0.014°, our results also show atomically sharp smooth surface and interfaces. © 2008 American Institute of Physics.