摘要
We studied the Schottky barrier for several metal-semiconductor interfaces using both deposition sequences: metal on semiconductor and semiconductor on metal. The interface morphology was found to depend on the deposition sequence, whereas both sequences produced the same interface chemical species and the same Schottky-barrier dependence on the metal electronegativity. These results clarify the nature of the Schottky term in the barrier height, supporting the effective-work-function theory of Freeouf and Woodall. © 1989 The American Physical Society.