Abstract
The crystallization of amorphous silicon by femtosecond laser annealing (FLA) was discussed. Investigations show that the ultrashort laser pulses lead to nonlinear photoenergy adsorption in irradiated materials. The nonlinear melting on transparent silicon materials was obtained due to the generation of dense photoexcited plasma in irradiated materials. It was concluded that the FLA was assisted by spatial scanning of laser strip spot constitutes superlateral epitaxy.