摘要
Detection of wafer/die crack after the wafer dicing process is important for yield rate control prior to packaging. The traditional approach of microscopic examination is done after the dies are stripped from the dicing tape, and further crack propagation could result from this pick-and-place process. An on-tape crack inspection technique is proposed in this paper so that the crack from the dicing process can be clearly identified. The issues of seeing through the silicon substrate and the scattering at the dicing tape have been resolved, respectively, using a nearinfrared wavelength of 1100 nm for illumination and using a feeding index matching liquid for filling the rough surface of the tape. Both the illumination and imaging optics of the inspection system have been designed and simulated with a ray-tracing program, and the prototype demonstrates the ability of seeing through the silicon substrate and dicing tape as well as detecting micro-crack down to 1.25 μm, whose resolution is sufficient for most applications of die crack inspection.