Near-infrared transmission measurement of EL2 concentration in semi-insulating GaAs wafers with a laser diode (λ = 1.3 μm)

Ci-Ling Pan; Hsiao-Hua Wu; Tzung-Rue Hsieh

doi:10.1143/JJAP.30.1430

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Near-infrared transmission measurement of EL2 concentration in semi-insulating GaAs wafers with a laser diode (λ = 1.3 μm)

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Near-infrared transmission measurement of EL2 concentration in semi-insulating GaAs wafers with a laser diode (λ = 1.3 μm)

Ci-Ling Pan, Hsiao-Hua Wu and Tzung-Rue Hsieh

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol.30(7 R), pp.1430-1431

1991

DOI: https://doi.org/10.1143/JJAP.30.1430

Appears in keyword about Physics

Abstract

We demonstrated a near-infrared transmittance setup for EL2 concentration mapping in undoped semi-insulating (SI) GaAs wafers. The light source was a power-stabilized laser diode (λ = 1.3 μm) operating in the light emitting diode (LED) mode. The sensitivity of the apparatus was as low as 1014 cm-3 for typical commercial wafers 350 μm in thickness.

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Title: Near-infrared transmission measurement of EL2 concentration in semi-insulating GaAs wafers with a laser diode (λ = 1.3 μm)
Creators - without role: Ci-Ling Pan - Institute of Electro-optical Engineering , National Chiao-Tung University
Hsiao-Hua Wu - National Yang Ming Chiao Tung University
Tzung-Rue Hsieh - Institute of Electro-optical Engineering , National Chiao-Tung University
Publication Details: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol.30(7 R), pp.1430-1431
Identifiers: 9957767707006774
Academic Unit: National Tsing Hua University
Language: English
Resource Type: Journal article

Near-infrared transmission measurement of EL2 concentration in semi-insulating GaAs wafers with a laser diode (λ = 1.3 μm)

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