Abstract
This letter presents a novel high density differential split gate flash memory with self-boosting function realized by 0.18-μ m embedded memory technology from Taiwan Semiconductor Manufacturing Company. The cell has a pair of symmetric floating gates to perform differential read for storage electrons in the dual gate. Besides, a simple and nondecoding self-boosting operation is built in to automatically boost threshold levels of the symmetric cells to prevent a long-term charge loss or data degradation problem. Since the cell process and tip erase structure are totally inherited from the proven split-gate flash technology, the highly efficient program and erase performances are remained in the new cell. This implemented self-boosting operation provides a promising solution for reliable embedded memory for advanced CMOS technology. © 1980-2012 IEEE.