New trap-assisted band-to-band tunneling induced gate current model for p-channel metal-oxide-semiconductor field effect transistors with sub-3 nm oxides

H.-M. Lee; C.-J. Liu; C.-W. Hsu; M.-S. Liang; Y.-C. King; C.C.-H. Hsu

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New trap-assisted band-to-band tunneling induced gate current model for p-channel metal-oxide-semiconductor field effect transistors with sub-3 nm oxides

Journal article

Peer reviewed

New trap-assisted band-to-band tunneling induced gate current model for p-channel metal-oxide-semiconductor field effect transistors with sub-3 nm oxides

H.-M. Lee, C.-J. Liu, C.-W. Hsu, M.-S. Liang, Y.-C. King and C.C.-H. Hsu

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol.40(3 A), pp.1218-1221

03/2001

Appears in keyword about Physics

Abstract

Band-to-band tunneling (BBT)

Gate current

PMOSFET

Trap density

Trap-assisted tunneling (TAT)

Ultra-thin oxide

A new trap-assisted band-to-band tunneling (TAB) gate current model is proposed to describe the new observed band-to-band tunneling (BBT) induced gate current characteristics of p-channel metal-oxide-semiconductor field effect transistors (PMOSFET's) with ultra-thin gate oxide. Based on this new TAB gate current model, the off-state gate currents of PMOSFET's with various sub-3 nm gate oxides can be well characterized, while the conventional BBT current model is no longer applicable in this regime.

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Title: New trap-assisted band-to-band tunneling induced gate current model for p-channel metal-oxide-semiconductor field effect transistors with sub-3 nm oxides
Creators - without role: H.-M. Lee - Microelectronics Laboratory , Department of Electrical Engineering , National Tsing-Hua University
C.-J. Liu - Microelectronics Laboratory , Department of Electrical Engineering , National Tsing-Hua University
C.-W. Hsu - Microelectronics Laboratory , Department of Electrical Engineering , National Tsing-Hua University
M.-S. Liang - Microelectronics Laboratory , Department of Electrical Engineering , National Tsing-Hua University
Y.-C. King - Microelectronics Laboratory , Department of Electrical Engineering , National Tsing-Hua University
C.C.-H. Hsu - Microelectronics Laboratory , Department of Electrical Engineering , National Tsing-Hua University
Publication Details: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol.40(3 A), pp.1218-1221
Identifiers: 9957767162006774
Academic Unit: Institute of Electronics Engineering, College of Electrical Engineering and Computer Science, National Tsing Hua University
Language: English
Resource Type: Journal article

New trap-assisted band-to-band tunneling induced gate current model for p-channel metal-oxide-semiconductor field effect transistors with sub-3 nm oxides

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