Abstract
A chemical vapour deposition-fluidized bed reactor technique was developed to perform metal deposition on ceramic particulates. Experiments of nickel and copper deposition on Al 2 O 3 and SiC particulates were conducted. Argon was used as the carrier gas to fluidize the ceramic particulates. The metal-H-Cl system was selected for the chemical vapour deposition. The volumetric ratios of the inlet gas were 3.5% HCl, 20.0% H 2 , and 76.5% Ar. The deposition reactions were carried out at four different temperatures: 500, 600, 700 and 800°C. Successful deposition of metallic nickel and copper on the ceramic particulates was observed. It was also noticed that the deposition rates varied with the types of substrates and deposited metals.