摘要
With an increasing demand for THz electronics applications, it is essential to obtain the electrical properties of semiconductor materials used in their fabrication. This study presents an approach to estimate the electrical properties of semi-insulating compound semiconductors using terahertz time-domain spectroscopy (THz-TDS). By employing THz-TDS in transmission mode, the resistivity and carrier concentration of semi-insulating Silicon Carbide (SiC) and Indium Phosphide (InP) wafers are non-destructively measured. The study utilizes the simplified Drude model and the Nelder-Mead algorithm to estimate the electrical properties from the THz-TDS transmission (S21) measurement data. The resistivity values of the SiC and InP samples, (1.42 ± 0.15) × 10 5 Ω cm and (3.0 ± 0.1) × 10 7 Ω cm, respectively, are in accordance with the manufacturer specifications. Moreover, the feasibility of non-destructive mapping of the electrical properties of the wafers is demonstrated, offering a novel tomographic inspection approach for online monitoring. This technique holds significant promise for enhancing production yields in the semiconductor industry.