摘要
We study experimentally an electrically pumped GaAs-based bandgap structure based on a vertical cavity surface emitting laser (VCSEL). We demonstrate that a microcavity embedded into this bandgap VCSEL structure supports localized optical modes without any holding beam. We propose a model of surface-structured VCSELs based on a reduced dissipative wave equation for describing electromagnetic modes in such semiconductor cavities and analyze a crossover between linear and nonlinear solitonlike cavity modes. © 2010 Optical Society of America.