Abstract
Operation properties of polysilicon-oxide-nitride-oxide-silicon (SONOS)-type nonvolatile semiconductor memory (NVM) devices with stacked tunneling and charge trapping layers were investigated in this work. Clear enhancement on operation speed and satisfactory retention of NVM device were achieved by adopting stacked tunneling oxide. Enhancement on programming speed but degradation on erasing operation was observed for device with stacked charge trapping layer. Finally, operating characteristics of devices with stacked tunneling oxide, stacked charge trapping layer, and combining both stacked tunneling oxide and charge trapping layer were compared and discussed. © 2008 Elsevier Ltd. All rights reserved.