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Novel SONOS-type nonvolatile memory device with optimal Al doping in HfAlO charge-trapping layer
Journal article   Peer reviewed

Novel SONOS-type nonvolatile memory device with optimal Al doping in HfAlO charge-trapping layer

Ping-Hung Tsai, Kuei-Shu Chang-Liao, Chu-Yung Liu, Tien-Ko Wang, P.J. Tzeng, C.H. Lin, L.S. Lee and M.-J. Tsai
IEEE Electron Device Letters, Vol.29(3), pp.265-268
03/2008
DOI: https://doi.org/10.1109/LED.2007.915380

Abstract

Atomic layer deposition (ALD) Charge trapping Flash HfAlO Nonvolatile memory Polysilicon-oxide-nitride-oxide-silicon (SONOS)-type
Operation properties of polysilicon-oxide-nitride-oxide-silicon-type Flash device with HfAlO charge-trapping layer having various Al contents were investigated in this letter. Satisfactory performance in terms of operation speed, retention, and program/erase endurance of the Flash device is achieved with the optimal Al content of 18%-28% in the HfAlO trapping layer. In addition, high-speed operation can be attained with the combination of channel-hot-electron-injection programming and band-to-band hot hole erasing for NOR architecture applications. © 2008 IEEE.

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