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Observation of bias-dependent low field positive magneto-resistance in Co-doped amorphous carbon films
Journal article   Peer reviewed

Observation of bias-dependent low field positive magneto-resistance in Co-doped amorphous carbon films

H.S. Hsu, P.Y. Chung, J.H. Zhang, S.J. Sun, H. Chou, H.C. Su, C.H. Lee, J. Chen and J.C.A. Huang
Applied Physics Letters, Vol.97(3), 032503
19/07/2010

Abstract

We report a considerable intrinsic positive magnetoresistance (PMR) effect in Co-doped amorphous carbon films by radio frequency magnetron sputtering. The kind of PMR effect is bias dependence and its ratio reaches a peak at a particular voltage. At room temperature, the maximum PMR ratio is about 10% among these samples. The x-ray absorption spectroscopy and Raman spectra results support the appearance of the bias-dependent PMR effect strongly depends on the sp 2 states and Co dopants. A phenomenological model related to orbital Zeeman splitting has been proposed to describe the resistance, which is controlled by voltage and magnetic field. © 2010 American Institute of Physics.

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