Logo image
返回
On-Wafer Electron Beam Detectors by Floating-Gate FinFET Technologies
期刊文章   開放取用(OA)   同儕審查

On-Wafer Electron Beam Detectors by Floating-Gate FinFET Technologies

Shi Jiun Wang, Chih-An Yang, Burn Jeng Lin, Chrong Jung Lin 和 Ya-Chin King
IEEE Transactions on Electron Devices, 卷.68(9), 頁碼.4651-4655
09/2021
DOI: https://doi.org/10.1109/TED.2021.3088393

摘要

CMOS compatible electron beam detection FinFET on-wafer Electronic Optical and Magnetic Materials Electrical and Electronic Engineering
A novel electron beam detector made on Si wafers by the advanced CMOS FinFET processes has been proposed in this study. Through electron beam (e-Beam) charging of on-wafer sensing pads, electron dosage can be registered on the detector for follow-up read-out. Without external power or battery connections, this detector has successfully delivered on-chip dosage, intensity, and energy after e-Beam exposure.

檔案與連結 (1)

url
https://doi.org/10.1109/TED.2021.3088393檢視
已出版(紀錄版本) 開放

相關連結

指標

1 檢視次數

詳細資料

Logo image