摘要
An on-wafer 3-D electron beam (e-beam) detector cube for in situ monitoring of advanced lithography processes is presented. The proposed detector array stands out because of its full compatibility with the FinFET CMOS logic process, heightened sensing resolution, and capability for battery-less sensing. The in situ stored sensed signal is accessible through offline, nondestructive wafer-level tests. To increase its depth resolution, lower layer metal stack in the CMOS process can be employed. The on-chip e-beam detector cube can faithfully produce readout signals, thereby enabling in-tool monitoring of critical parameters, such as energy and scattering response. This innovation carries particular significance for advanced lithographical systems for CMOS technologies beyond the 5-nm node.