摘要
This article studies the characteristics of the floating-gate (FG)-based plasma charging detecting recorder realized in FinFET CMOS logic process. The proposed device enables accurate detection and quantification of plasma-induced charging on wafer surfacing in plasma processing chambers. A new fin-coupled structure by different types of wells is introduced to separately record the ion and electron charging effects, providing detailed insights into plasma-induced transient charging phenomena. This approach offers a reliable wafer-level monitoring solution for advanced CMOS production lines.