摘要
In this paper, we present an analytical solution for evaluating the ramped-pulse programming behaviors of the drain-coupling source-side injection split-gate flash for multilevel charge storage. Starting with the programming model, the relations of the storage charge, read current and peak lateral field to the ramped-pulse programming time are analytically expressed as functions of electrical, technological and physical parameters and agree well with experimental results. The program speed and program accuracy, including the effects of electrical bias and process variations, are analytically estimated. ©2006 The Japan Society of Applied Physics.