Abstract
Ge nanostructures were synthesized by reduction of GeO 2 in H 2 atmosphere at various temperatures. Entangled and straight Ge nanowires with oxide shells were grown at high temperatures. Ge nanowires with various numbers of nodules were obtained at low temperatures. Ge nanowires without nodules exhibited remarkable field emission properties with a turn-on field of 4.6 V μm -1 and field enhancement factor of 1242. © 2010 IOP Publishing Ltd.