Abstract
The fabrication of a metal-oxide field-effect transistor (MOSFET) based on an electroluminescent conjugated polymer on glass substrate was studied. An active pixel in which the light emitting diode (LED) and a MOSFET share the same active polymer was demonstrated using poly [2-methoxy-5 (2′-ethyl-hexyloxy)-1,4-phenylene vinylene] (MEH-PPV) model. Individual mobility measurement was performed by fitting the space-charge-limited current (SCLC) in horizontal electrodes. The results shows that the horizontal mobility for the MOSFET in the spin-coated film can be three orders of magnitude larger than the vertical mobility for the LED.