摘要
ZnO quantum dots (QDs)- Si O2 nanocomposite films were prepared using the target-attached radio-frequency sputtering. The transmission electron microscopy revealed the uniform dispersion of ZnO QDs with diameters about 2-7 nm in amorphous Si O2 matrix. The photoluminescence showed that small ZnO QDs are able to emit white light with luminescence spectra similar to those of the present GaN-based light emitting diode (LED). The calculated chromaticity coordinates of emitting light evidenced the feasibility of ZnO QDs- Si O2 nanocomposite films as the fluorescence material in optoelectronic devices. © 2006 American Institute of Physics.