Optimization of back channel leakage characteristic in PD SOI p-MOSFET

H.C. Lo; Y.T. Chen; C.T. Li; W.C. Luo; W.Y. Lu; M.C. Chen; C.F. Cheng; T.L. Chen; C.T. Yang; C.H. Lien; Samuel K. H. Fung; C.C. Wu

doi:10.1149/1.3459931

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Optimization of back channel leakage characteristic in PD SOI p-MOSFET

H.C. Lo, Y.T. Chen, C.T. Li, W.C. Luo, W.Y. Lu, M.C. Chen, C.F. Cheng, T.L. Chen, C.T. Yang, C.H. Lien, …

Journal of the Electrochemical Society, Vol.157(9)

2010

DOI: https://doi.org/10.1149/1.3459931

Abstract

The impact of back channel leakage (BCL) is thoroughly investigated when scaling down partially depleted (PD) silicon-on-insulator (SOI) devices. Back channel voltage is introduced as an indicator for monitoring the behavior of BCL. In addition to front-gate devices, back-gate devices also suffer from short channel effect. Finally, BCL can be successfully suppressed by optimizing process parameters such as the Si remains, the well implant, and the SOI thickness. © 2010 The Electrochemical Society.

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Title: Optimization of back channel leakage characteristic in PD SOI p-MOSFET
Creators - without role: H.C. Lo - National Tsing Hua University
Y.T. Chen - Taiwan Semiconductor Manufacturing Company (Taiwan)
C.T. Li - Taiwan Semiconductor Manufacturing Company Limited
W.C. Luo - Taiwan Semiconductor Manufacturing Company (Taiwan)
W.Y. Lu - Taiwan Semiconductor Manufacturing Company (Taiwan)
M.C. Chen
C.F. Cheng - Taiwan Semiconductor Manufacturing Company Limited
T.L. Chen - Taiwan Semiconductor Manufacturing Company (Taiwan)
C.T. Yang - Taiwan Semiconductor Manufacturing Company (Taiwan)
C.H. Lien - National Tsing Hua University
Samuel K. H. Fung - Taiwan Semiconductor Manufacturing Company Limited
C.C. Wu - Taiwan Semiconductor Manufacturing Company (Taiwan)
Identifiers: 9957775529206774
Academic Unit: College of Electrical Engineering and Computer Science, National Tsing Hua University
Language: English
Resource Type: Journal article
Publication Details: Journal of the Electrochemical Society, Vol.157(9)

Optimization of back channel leakage characteristic in PD SOI p-MOSFET

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