摘要
A novel source switching procedure in gas source molecular‐beam epitaxy to achieve abrupt interfaces in lattice‐matched InP/GaInAs has been demonstrated. In this process, a two‐step gas source switching procedure was used at the InP‐to‐GaInAs interface and a single growth pause was employed at the GaInAs‐to‐InP interface. Gas source switching procedures were optimized through characterizing multiple quantum well samples using photoluminescence and double crystal x‐ray diffraction measurements. Single quantum wells grown using the optimized switching procedure displayed the narrowest luminescence linewidth values compared to other documented samples grown by gas source molecular‐beam epitaxy.