摘要
Nanowires are of intense interest on account of their ability to confine electronic and phononic excitations in narrow channels, leading to unique vibronic and optoelectronic properties. Most systems reported to date exhibit nanowire axes perpendicular to the substrate surface, while for many applications (e.g., photodetectors and sensors), a parallel orientation may be advantageous. Here, we report the formation of in-plane Sb Te nanowires using femtosecond laser irradiation. High-resolution scanning transmission electron microscopy imaging and element mapping reveal that an interesting laser-driven anion exchange mechanism is responsible for the nanowire formation. This development points the way to the scalable production of a distinct class of nanowire materials with in-plane geometry.