Abstract
La-doped bismuth titanate (BLT) thin films were grown on Pt/TiO 2 /SiO 2 /Si(100) substrates by chemical solution deposition. The BLT films were found to crystallize preferably either with (001)-oriented or (117)-oriented grains depending on baking conditions used in the film-coating process. The grain growth rate of (001)-oriented grains is considerably higher than that of (117)-oriented grains; consequently, the crystallized BLT films appeared to be packed with grains of two different sizes. Ferroelectric properties of the crystallized BLT films were also closely related to the volume fraction of (001)-oriented grains with respect to that of (117)-oriented grains.