Abstract
Self-catalyzed growth of FeSi nanowires has been achieved via a spontaneous chemical reaction method. The room-temperature ferromagnetism behavior compared to that of bulk FeSi at 4 K is attributed to the enhancement of magnetic coupling behavior correlated to different crystalline orientations. The resistivity of the single-stem FeSi nanowire was determined to be 2650 μΩ•cm. The fabricated memory devices based on FeSi nanowires showed significant C-V hysteresis, exhibiting the memory effect. The strong memory effect can be accounted for by the presence of defects or dangling bonds on the surface of the FeSi nanowires embedded in the SiO 2 layer, which enhances the trapping density for nonvolatile memory applications. © 2011 American Chemical Society.