摘要
Using electrostatic force microscopy, we show direct evidence of charge injection at the carbon nanotube-SiO 2 interface leading to the appearance of hysteresis. The dynamic screening effect of the injected charges is revealed step by step. Further temperature dependent tests also demonstrate the effect of SiO 2 surface chemistry. Furthermore, we conclude that it is not practical to use such a device for memory application because of data retention and storage density issues. © 2011 IOP Publishing Ltd.