摘要
In this study, a supercritical carbon dioxide combined with oxygen (SCCO 2 +O 2 ) treatment is proposed as a novel approach to eliminate size effects and enhance polarization characteristics in Hf 0.5 Zr 0.5 O 2 hafnium zirconium oxide (HZO) based ferroelectric capacitors. After the SCCO 2 +O 2 treatment, the HZO-based ferroelectric capacitors demonstrate significant improvements in electrical performance and reliability. Furthermore, random telegraph noise (RTN) and material analysis suggest that defect states are effectively reduced by the incorporation of oxygen ions. Moreover, statistical analysis confirms substantially enhanced polarization magnitude and device uniformity. Finally, these results suggest that the SCCO 2 +O 2 treatment effectively passivates defect states and overcomes the size effect at a low process temperature (300 °C).