摘要
In this study, we demonstrate the overcoming of the conventional drive current-threshold voltage (I ON -V _(\text TH)\text ) tradeoff in back-end-of-line (BEOL)-compatible atomic layer deposition indium oxide thin-film (In 2 O ₃\text ) transistors using oxygen plasma passivation. A 100-nm-channel optimized device exhibits a positive threshold voltage (V _(\text TH)\text ) shift of 0.63V while simultaneously enhancing drive current (I _(\text ON)\text ) by 211% to 105 μ A/ μ m at an overdrive voltage of 1V. It also shows excellent gate control and bias stability with a subthreshold swing (SS) of 78.8mV/dec, drain-induced barrier lowering (DIBL) of 21.1mV/V and a Δ V TH of −5mV under positive bias stress. This improvement originates from polarity-selective defect modulation by oxygen plasma: passivation of donor-like traps reduces the carrier concentration and induces a positive V TH shift, whereas stronger suppression of acceptor-like traps mitigates trap-limited conduction (TLC) and enhances carrier transport efficiency. This work establishes a correlation between oxygen plasma treatment, defect polarity evolution, and carrier transport. It provides a simple and BEOL-compatible defect-engineering strategy for high-performance and stability-enhanced In 2 O 3 logic devices.