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Oxidation behavior of Al-Cr-Nb-Si-Zr high entropy nitride thin films at 850 °C
期刊文章

Oxidation behavior of Al-Cr-Nb-Si-Zr high entropy nitride thin films at 850 °C

Jian-Jie WangFan-Yi Ouyang
Corrosion Science, 卷.187, 109467
07/2021

摘要

Diffusion markers High entropy materials Multi-element oxidation Nitride films Oxidation kinetics Chemistry (all) Chemical Engineering (all) Materials Science (all)
Oxidation behavior of Al-Cr-Nb-Si-Zr high entropy nitride (HEN) thin films was investigated in air atmosphere at 850 °C. The thermo-gravimetric analyzer (TGA) results show that oxidation kinetics of HEN films followed the parabolic rate law. A triple oxide layer, Al 2 O 3 /Cr 2 O 3 /Al 2 O 3 , was found with nanocrystalline ZrO 2 dispersed in the oxide scales. Through Au nanoparticles as diffusion markers, the formation of the scales was mainly due to the outward diffusion of cations in the beginning, and the dominant diffusion species were changed to inward diffusion of anions in longer oxidation periods.

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