摘要
Oxygen vacancies (VO) critically influence the electronic properties and stability of amorphous oxide semiconductor (AOS) thin-film transistors (TFTs). Here, we investigate the impact of oxygen partial pressure during film deposition on charge transport mechanisms in 10-nm-thick silicon-doped indium oxide (ISO) TFTs. By adjusting the Ar:O2 ratio (11:1, 8:4, and 6:6), we observe a shift from interface-limited to bulk-scattering-dominated transport. Higher O2 pressure leads to increased subthreshold swing (SS), positive threshold voltage (Vth) shifts, and larger current fluctuations, suggesting greater charge trapping and mobility degradation. Low-frequency noise (LFN) analysis further reveals a shift in the dominant noise mechanism: interface charge trapping dominates at low O2 pressure, while bulk carrier scattering prevails at high O2 pressure. The extracted trap density (Nit) increases by nearly two orders of magnitude, confirming the role of fully oxidized indium atoms in the conducting channel as charge-scattering centers. These findings establish oxygen pressure as a key parameter for balancing interface and bulk effects in AOS TFTs and provide a pathway for optimizing device performance and stability in next-generation oxide electronics.
Oxygen Pressure Control steers charge transport from interface charge trapping to bulk scattering in silicon-doped In2O3 thin-film transistors. Low-frequency noise analysis reveals that, with increasing O2 partial pressure, fully oxidized indium atoms become active scattering centers. This study demonstrates an oxygen-engineering strategy to optimize device performance and stability. [Display omitted]