摘要
A study is conducted to report a general synthesis methodology to achieve in-plane parallel stitched heterostructures between 2D and transition-metal dichalcogenide (TMD) materials regardless of the lattice mismatch between materials, with large-scale production capability. This enables both multifunctional electronic/optoelectronic devices and their large scale integration. This technique offers an opportunity to synthesize many basic functional building blocks for electronic and optoelectronic devices in 2D, including metal?semiconductor, semiconductor?semiconductor, and insulator?semiconductor heterostructures.