Abstract
Epitaxial HfSi 2 has been grown locally on (001)Si. In samples annealed in one step at 1100 °C or in two steps at 450-1100 °C, islands of HfSi 2 of 0.8 μm in average grain size were found to cover about 40% of the surface area. About 70% of the disilicide in areal fraction was found to be epitaxial silicide, 0.6-1.2 μm in size. The orientation relationships between epitaxial HfSi 2 and (001)Si substrate were analyzed to be [010]HfSi 2 ∥[001]Si and (002)HfSi 2 ∥(220)Si (with about 1°misorientation). Interfacial dislocations, 75 Å in average spacing, were identified to be of edge type with 1/2〈110〉 Burgers vectors. No HfSi 2 epitaxy was found to form on (111)Si.