摘要
Due to the lack of a bandgap, applications of graphene require special device structures and engineering strategies to enable semiconducting characteristics at room temperature. To this end, graphene-based vertical field-effect transistors (VFETs) are emerging as one of the most promising candidates. Previous work attributed the current modulation primarily to gate-modulated graphene-semiconductor Schottky barrier. Here, we report the first experimental evidence that the partially screened field effect and selective carrier injection through graphene dominate the electronic transport at the organic semiconductor/graphene heterointerface. The new mechanistic insight allows us to rationally design graphene VFETs. Flexible organic/graphene VFETs with bending radius <1 mm and the output current per unit layout area equivalent to that of the best oxide planar FETs can be achieved. We suggest driving organic light emitting diodes with such VFETs as a promising application.