Abstract
An integration of polymer light-emitting diode (LED) and polymer transistor was analyzed where no patterning of organic layers was required. For hole-transport layer (HTL) in polymer LED, an intrinsic high-mobility semiconducting conjugated polymer poly(3-hexylthiophene)(P3HT) was used. The light emission efficiency with conventional heavily doped HTL was slightly lower than LED. The brightness of 490 cd/m 2 was achieved with maximum drain current of 3.6 μA for 100×100 μm active pixel LED.