Performance Evaluation of Silicon and Germanium Ultrathin Body (1 nm) Junctionless Field-Effect Transistor with Ultrashort Gate Length (1 nm and 3 nm)

Yi-Ruei Jhan; Vasanthan Thirunavukkarasu; Cheng-Ping Wang; Yung-Chun Wu

doi:10.1109/LED.2015.2437715

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Performance Evaluation of Silicon and Germanium Ultrathin Body (1 nm) Junctionless Field-Effect Transistor with Ultrashort Gate Length (1 nm and 3 nm)

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Peer reviewed

Performance Evaluation of Silicon and Germanium Ultrathin Body (1 nm) Junctionless Field-Effect Transistor with Ultrashort Gate Length (1 nm and 3 nm)

Yi-Ruei Jhan, Vasanthan Thirunavukkarasu, Cheng-Ping Wang and Yung-Chun Wu

IEEE Electron Device Letters, Vol.36(7), pp.654-656

01/07/2015

DOI: https://doi.org/10.1109/LED.2015.2437715

Abstract

Germanium

Junctionless FET (JLFET)

Ultra-thin body (UTB)

Silicon (Si) and Germanium (Ge) ultrathin body junctionless field-effect transistor (UTB-JLFET) with L-{G}= 1 nm and L-{G} = 3 nm were demonstrated by solving the coupled drift-diffusion and density-gradient model. The simulation results show that the Si and Ge channel can be used in ultrashort channel device as long as UTB is employed. As UTB is employed, ultra-short channel device does not need to follow an empirical rule of T-{m ch} = extrm {L}-{G}/3. Furthermore, Ge UTB-JLFET 6T-SRAM cell has reasonable static noise margin value of 149 mV. The circuit performances reveal that UTB-JLFET can be used for sub-5-nm CMOS technology nodes.

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Title: Performance Evaluation of Silicon and Germanium Ultrathin Body (1 nm) Junctionless Field-Effect Transistor with Ultrashort Gate Length (1 nm and 3 nm)
Creators - without role: Yi-Ruei Jhan - Department of Engineering and System Science, National Tsing Hua University
Vasanthan Thirunavukkarasu - National Tsing Hua University
Cheng-Ping Wang - Department of Engineering and System Science, National Tsing Hua University
Yung-Chun Wu - Department of Engineering and System Science, National Tsing Hua University
Publication Details: IEEE Electron Device Letters, Vol.36(7), pp.654-656
Identifiers: 9957771661506774
Academic Unit: Institute of Nuclear Engineering and Science, College of Nuclear Science, National Tsing Hua University
Language: English
Resource Type: Journal article

Performance Evaluation of Silicon and Germanium Ultrathin Body (1 nm) Junctionless Field-Effect Transistor with Ultrashort Gate Length (1 nm and 3 nm)

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