摘要
Performance improvement on Ge nFinFET, pFinFET and CMOS inverter can be achieved by using a novel low temperature damage-free supercritical phase fluid (SCF) treatment. Thanks to effective reduction of unstable oxidation states, oxygen vacancies and interface traps, higher on-off current ratios (8 × 105 for pFinFET and 3.3 × 105 for nFinFET), lower S.S. (72 mV/dec), higher on current (>45% improvement) and better reliability in Ge FinFETs are achieved with a SCF treatment as compared with a remote plasma post-oxidation (PPO) one. Besides, a higher voltage gain (88 V/V) of Ge FinFET CMOS inverter is obtained with a SCF treatment in comparison with a remote PPO one.